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1/12 march 2005 . stp80nf55-08 stb80nf55-08 stb80nf55-08-1 n-channel 55v - 0.0065 ? - 80a d 2 pak/i 2 pak/to-220 stripfet? ii power mosfet rev. 1 table 1: general features typical r ds (on) = 0.0065 ? low threshold drive description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications high current switching application automotive environment type v dss r ds(on) i d stb80nf55-08/-1 stp80nf55-08 55 v 55 v <0.008 ? <0.008 ? 80 a 80 a figure 1: package 1 2 3 1 3 1 2 3 to-220 d 2 pak to-263 i 2 pak to-262 figure 2: internal schematic diagram table 2: order codes table 3: absolute maximum ratings ( ??) pulse width limited by safe operating area. ( ? ) current limited by package (1) starting t j = 25 o c, i d = 40a, v dd = 30v sales type marking package packaging stb80nf55-08-1 b80nf55-08 i2pak tube STB80NF55-08T4 b80nf55-08 d2pak tape & reel stp80nf55-08 p80nf55-08 to220 tube symbol parameter value unit v ds drain-source voltage (v gs = 0) 55 v v dgr drain-gate voltage (r gs = 20 k ? ) 55 v v gs gate- source voltage 20 v i d ( ?) drain current (continuous) at t c = 25c 80 a i d ( ?) drain current (continuous) at t c = 100c 80 a i dm ( ??) drain current (pulsed) 320 a p tot total dissipation at t c = 25c 300 w derating factor 2 w/c e as (1) single pulse avalanche energy 870 mj t stg storage temperature -55 to 175 c t j operating junction temperature
stb80nf55-08/-1 stp80nf55-08 2/12 table 4: thermal data electrical characteristics (t case = 25 c unless otherwise specified) table 5: off table 6: on (* ) table 7: dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max typ 0.5 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a v gs = 0 55 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 234v r ds(on) static drain-source on resistance v gs = 10 v i d = 40 a 0.0065 0.008 ? symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d =18 a 40 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 3850 800 250 pf pf pf
3/12 stb80nf55-08/-1 stp80nf55-08 table 8: switching on table 9: switching off table 10: source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ?) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30 v i d = 40 a r g =4.7 ? v gs = 10 v (resistive load, figure 17) 25 85 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 44v i d = 80 a v gs = 10v 115 24 46 155 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 30 v i d = 40 a r g =4.7 ?, v gs = 10 v (resistive load, figure 17) 70 25 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 80 320 a a v sd (*) forward on voltage i sd = 80 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a di/dt = 100a/s v dd = 25 v t j = 150c (see test circuit, figure 19) 80 245 6.4 ns nc a electrical characteristics (continued) figure 3: safe operating area figure 4: thermal impedance
stb80nf55-08/-1 stp80nf55-08 4/12 figure 5: output characteristics figure 6: transfer characteristics figure 7: transconductance figure 8: static drain-source on resistance figure 9: gate charge vs gate-source voltage figure 10: capacitance variations
5/12 stb80nf55-08/-1 stp80nf55-08 . . figure 11: normalized gate threshold voltage vs temperature figure 12: normalized on resistance vs temperature figure 13: source-drain diode forward characteristics figure 14: normalized breakdown voltage vs temperature . . .
stb80nf55-08/-1 stp80nf55-08 6/12 figure 15: unclamped inductive load test circuit figure 17: switching times test circuits for resis- tive load figure 16: unclamped inductive waveform figure 18: gate charge test circuit figure 19: test circuit for inductive load switching and diode recovery times
7/12 stb80nf55-08/-1 stp80nf55-08 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.016 v2 0 8 0 8 d 2 pak mechanical data
stb80nf55-08/-1 stp80nf55-08 8/12 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data
9/12 stb80nf55-08/-1 stp80nf55-08 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
stb80nf55-08/-1 stp80nf55-08 10/12 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r 50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix ?t4?)* d 2 pak footprint tape mechanical data
11/12 stb80nf55-08/-1 stp80nf55-08 table 11: revision history date revision description of changes january 2005 1.0 first issue
stb80nf55-08/-1 stp80nf55-08 12/12 i nformation furnished is believed to be accurate and reliable. ho wever, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners. ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco -singapore - spain - sweden - switzerland - united kingdom - united states. www.st.com

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